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Sheet A · Product board
Unit price
EUR43.20
EUR93.20

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Field rating
4.4

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.PP1851 Insulated gate bipolar transistor IGBT Toshiba MG50N2YK1 ECE5AE-85-00 Technical specifications: Robust construction with

SKU: 1356248139

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Ships within 48 hours · Estimated delivery Sep 21 - Sep 26

Description

Technical specifications: Robust construction with durable materials for a long service life

24V operating voltage: With an operating voltage of 24 volts

Hochwertige Materialien: Die Baugruppe besteht aus langlebigen Materialien

High quality materials: Made from resistant materials that guarantee reliable performance

von einfachen bis komplexen Steuerungsanforderungen

.PP1851 Insulated gate bipolar transistor IGBT Toshiba MG50N2YK1 ECE5AE-85-00 Technical specifications: Robust construction withDer . PP1851 Insulated Gate Bipolar Transistor (IGBT) Toshiba MG50N2YK1 ist eine zuverlssige Wahl fr industrielle Anwendungen, die hohe Leistung und Effizienz erfordern. Dieses Produkt stammt aus einer Demontage von Industriemaschinen und war bis zu seinem Ausbau in Betrieb, was seine Qualitt und Leistungsfhigkeit unterstreicht. Mit seinem robusten Design ist er ideal fr den Einsatz in Energiesystemen und Antriebstechnik. Hohe Leistungsfhigkeit:

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